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d a t a sh eet preliminary speci?cation supersedes data of 2002 nov 27 2003 jun 26 integrated circuits TZA1045 photodiode and amplifier ic for cd and dvd applications
2003 jun 26 2 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 features high frequency rf amplifiers (typical bandwidth = 240 mhz) suitable for all cd (785 nm) and dvd (655 nm) read/write applications four high bandwidth central outputs (a, b, c, and d), four satellite outputs (e, f, g, and h) and one high bandwidth differential output (rfp, rfn) internal current clamp and current fold back (power reduction) versatile programmable gain switches (cd/dvd, h/l, and r/w) single 5 v supply current outputs for optimum signal transport over flex cable small outline package ssop16t with good positional tolerance. applications cd and dvd read/write applications. general description the TZA1045 is a single optical pick-up ic for read/write systems and is suitable for cd and dvd applications. the device contains eight rf amplifiers for the central and satellite diodes and one differential rf amplifier (rfp and rfn) which handles the sum of the four a, b, c, and d central diode signals. programming the gain is a very versatile way to optimize interfacing between the TZA1045 and the pre-amplifier. the gain can be programmed for cd or dvd media with the gain switch cd/dvd. the h/l switch can be used for cd-r or cd-rw discs. gain switch r/w is used to reduce the gain during writing. during writing, the high peak signals for the central and satellite segments are clamped internally and the output currents of the a, b, c, d, e, f, g, and h segments are reduced to almost zero (fold back) to minimize the power consumption. all outputs are current outputs that can supply a maximum of 8 ma. in cd-r writing mode, the clipping level of the output currents is between 5 and 8 ma. the ssop16t package has a low spread on the z tolerance. the z tolerance is measured between the diodes (chip surface) and the bottom of the leads. the diodes have an offset of 54 m m in the y direction with respect to the leadframe centre and a tolerance of 50 m m in both x and y directions. the diodes are placed under an angle of 45 1 with respect to the leadframe of the module. ordering information type number package name description version TZA1045ts ssop16t plastic shrink small outline package/transparent; 16 leads (straight); body width 4.4 mm sot734-1
2003 jun 26 3 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 quick reference data symbol parameter conditions min. typ. max. unit supplies v dd1 supply voltage front-end 4.5 5.0 5.5 v v dd2 supply voltage back-end 4.5 5.0 5.5 v i dd1 supply current front-end dark conditions writing dvd+r 12.8 17.4 21.3 ma writing cd-r 30.9 41.2 51.5 ma writing dvd+rw 12.9 17.2 21.5 ma writing cd-rw 11.4 15.2 19.0 ma reading dvd-rom 31.9 42.5 53.1 ma reading cd-rom 31.3 41.8 52.2 ma reading dvd+rw 31.7 42.2 52.8 ma reading cd-rw 30.9 41.2 51.5 ma i dd2 supply current back-end dark conditions - 6.0 - ma temperature range t amb ambient temperature 0 - 70 c rf bandwidth b - 3db(cen) rf bandwidth central channels a, b, c, and d i o =1ma writing dvd+r 135 170 205 mhz writing cd-r 225 280 340 mhz writing dvd+rw 240 300 360 mhz writing cd-rw 115 145 175 mhz reading dvd-rom 135 170 205 mhz reading cd-rom 100 125 155 mhz reading dvd+rw 135 170 205 mhz reading cd-rw 80 105 130 mhz b - 3db(dif) rf bandwidth differential channels rfp and rfn i o =1ma writing dvd+r 135 170 205 mhz writing cd-r 235 290 350 mhz writing dvd+rw 290 360 435 mhz writing cd-rw 120 150 180 mhz reading dvd-rom 135 170 210 mhz reading cd-rom 95 120 145 mhz reading dvd+rw 140 175 210 mhz reading cd-rw 80 105 130 mhz
2003 jun 26 4 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 b - 3db(sat) rf bandwidth satellite channels e, f, g and h i o =1ma writing dvd+r 65 85 105 mhz writing cd-r 70 90 110 mhz writing dvd+rw 90 115 140 mhz writing cd-rw 60 75 90 mhz reading dvd-rom 85 110 135 mhz reading cd-rom 60 75 90 mhz reading dvd+rw 80 100 120 mhz reading cd-rw 40 50 60 mhz settling time; note 1 t st(max) settling time cd-r write mode (central and satellite channels); i set > 300 m a; accuracy set level within 5%; ratio write to read peak level factor <50 - <22 - ns cd-r write mode (differential channels rfp and rfn); i set >70 m a; accuracy set level within 5%; ratio write to read peak level factor <50 - <22 - ns cd-rw and dvd+rw write modes (all channels); no clip; i set >70 m a; accuracy set level within 5%; ratio write to read peak level factor 2; i o 100 m a; accuracy set level within 5%; ratio write to read peak level factor 20; i o 2003 jun 26 5 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 note 1. the settling time includes the recovery time. sensitivity s dvd+r output current sensitivity for dvd+r writing; l = 655 nm i o(cen) - 1.44 - a/w i o(sat) - 4.76 - a/w i o(rfp) , i o(rfn) - 0.54 - a/w s cd-r output current sensitivity for cd-r writing; l = 785 nm i o(cen) - 43.2 - a/w i o(sat) - 173 - a/w i o(rfp) , i o(rfn) - 1.08 - a/w s dvd+rw output current sensitivity for dvd+rw writing; l = 655 nm i o(cen) - 2.88 - a/w i o(sat) - 11.5 - a/w i o(rfp) , i o(rfn) - 1.08 - a/w reading; l = 655 nm i o(cen) - 43.2 - a/w i o(sat) - 173 - a/w i o(rfp) , i o(rfn) - 16.2 - a/w s cd-rw output current sensitivity for cd-rw writing; l = 785 nm i o(cen) - 5.67 - a/w i o(sat) - 23.0 - a/w i o(rfp) , i o(rfn) - 2.16 - a/w reading; l = 785 nm i o(cen) - 173 - a/w i o(sat) - 691 - a/w i o(rfp) , i o(rfn) - 64.8 - a/w s dvd-rom output current sensitivity for dvd-rom reading; l = 655 nm i o(cen) - 21.6 - a/w i o(sat) - 86.4 - a/w i o(rfp) , i o(rfn) - 8.1 - a/w s cd-rom output current sensitivity for cd-rom reading; l = 785 nm i o(cen) - 86.4 - a/w i o(sat) - 346 - a/w i o(rfp) , i o(rfn) - 32.4 - a/w symbol parameter conditions min. typ. max. unit
2003 jun 26 6 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 block diagram handbook, full pagewidth a v dd2 v dd1 b v dd2 v dd1 c v dd2 v dd1 d v dd2 v dd1 e v dd2 v dd1 v dd1 v dd1 f v dd2 v dd1 g v dd2 v dd1 h coder (1) v dd2 v dd1 TZA1045 1 14 v dd2 3 gnd 6 h/l 12 a 7 b 8 c 2 d 16 e 10 f 15 g cd/dvd 13 r/w 11 9 h v dd2 v dd2 4 rfp 5 rfn mgu615 fig.1 block diagram. (1) the coder translates the three digital inputs into the appropriate gain level of each amplifier. the limiter is switched on only for cd-r writing for the segment outputs.
2003 jun 26 7 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 pinning symbol pin description a 1 central segment output a d 2 central segment output d v dd2 3 supply voltage back-end rfp 4 positive rf output rfn 5 negative rf output gnd 6 ground b 7 central segment output b c 8 central segment output c h 9 satellite segment output h f 10 satellite segment output f r/w 11 gain select switch for reading or writing h/l 12 gain select switch for high or low re?ective media cd/dvd 13 gain select switch for cd or dvd v dd1 14 supply voltage front-end g 15 satellite segment output g e 16 satellite segment output e handbook, halfpage TZA1045ts mgu614 1 2 3 4 5 6 7 8 a d v dd2 rfp rfn gnd b c e g v dd1 cd/dvd h/l r/w f h 16 15 14 13 12 11 10 9 fig.2 pin configuration. mode selection table 1 coder switching pin level mode r/w h/l cd/dvd low low low writing dvd+r low low high writing cd-r low high low writing dvd+rw low high high writing cd-rw high low low reading dvd-rom high low high reading cd-rom high high low reading dvd+rw high high high reading cd-rw
2003 jun 26 8 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 mechanical data handbook, full pagewidth 50 115 115 145 100 mgu616 150 150 a ef gh b dc 50 fig.3 photodiode configuration. dimensions in m m. space between central segments: <1 m m. space between satellite segments: <1 m m. handbook, full pagewidth e detail x see detail x package centre + 54 m m offset 45 1 mgu617 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 x y fig.4 diagram showing position of the photodiode array with respect to the package (top view). 45 angle is with respect to the leadframe. drawing is not to scale. package window is not shown.
2003 jun 26 9 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 limiting values in accordance with the absolute maximum rating system (iec 60134). characteristics v dd1 =v dd2 = 5 v; pin r/w = low; pin h/l = low; pin cd/dvd = high; v a to v h = 2.5 v; v rfp =v rfn = 2.5 v; measured in dark conditions; t amb =25 c; unless otherwise speci?ed. symbol parameter min. max. unit v dd1 supply voltage front-end - 0.3 +5.5 v v dd2 supply voltage back-end - 0.3 +5.5 v d v dd1 supply voltage difference with respect to v dd2 v dd2 - 0.3 v dd2 + 0.3 v d v dd2 supply voltage difference with respect to v dd1 v dd1 - 0.3 v dd1 + 0.3 v v n voltage at pins a, b, c, d, e, f, g, h, rfp and rfn - 0.3 v dd2 + 0.3 v cd/dvd, h/l and r/w - 0.3 v dd1 + 0.3 v symbol parameter conditions min. typ. max. unit supplies v dd1 supply voltage front-end note 1 4.5 5.0 5.5 v v dd2 supply voltage back-end note 1 4.5 5.0 5.5 v i dd1 supply current front-end dark conditions; note 2 writing dvd+r 12.8 17.4 21.3 ma writing cd-r 30.9 41.2 51.5 ma writing dvd+rw 12.9 17.2 21.5 ma writing cd-rw 11.4 15.2 19.0 ma reading dvd-rom 31.9 42.5 53.1 ma reading cd-rom 31.3 41.8 52.2 ma reading dvd+rw 31.7 42.2 52.8 ma reading cd-rw 30.9 41.2 51.5 ma i dd2 supply current back-end dark conditions; t amb = 0 to 70 c; note 2 4.5 6.0 7.5 ma temperature range t amb ambient temperature 0 - 70 c central segment outputs; pins a, b, c, and d b - 3db channel a, b, c, and d rf bandwidth i o =1ma writing dvd+r 135 170 205 mhz writing cd-r 225 280 340 mhz writing dvd+rw 240 300 360 mhz writing cd-rw 115 145 175 mhz reading dvd-rom 135 170 205 mhz reading cd-rom 100 125 155 mhz reading dvd+rw 135 170 205 mhz reading cd-rw 80 105 130 mhz
2003 jun 26 10 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 m sens channel a, b, c and d matching sensitivity note 3 0 - +5 % v o output voltage range 1 - v dd2 - 1v i o output current excluding writing cd-r 0 3 6.5 ma i o(offset) output offset current dark conditions; t amb = 0 to 70 c - 7 - +15 m a i o(clip) output current clipping level cd-r writing; note 4 5 - 8ma i n(o) spot noise output current i o = 2.0 ma; f o = 50 mhz reading dvd-rom - 480 - pa/ ? hz reading cd-rom - 1660 - pa/ ? hz reading dvd+rw - 685 - pa/ ? hz reading cd-rw - 1900 - pa/ ? hz differential rf outputs; pins rfp and rfn b - 3db channel rfp and rfn rf bandwidth i o =1ma writing dvd+r 135 170 205 mhz writing cd-r 235 290 350 mhz writing dvd+rw 290 360 435 mhz writing cd-rw 120 150 180 mhz reading dvd-rom 135 170 210 mhz reading cd-rom 95 120 145 mhz reading dvd+rw 140 175 210 mhz reading cd-rw 80 105 130 mhz d t d(p) phase delay variation i o = 1 ma; f i = 13 to 130 mhz reading dvd-rom - 0.15 - ns reading cd-rom - 1 - ns reading dvd+rw - 0.25 - ns reading cd-rw - 1.3 - ns d t d(g) group delay variation i o = 1.5 ma; f i = 2.6 to 130 mhz reading dvd-rom - 0.4 - ns reading cd-rom - 0.8 - ns reading dvd+rw - 0.6 - ns reading cd-rw - 1.2 - ns v o output voltage range 1 - v dd2 - 1v i o output current 028ma i o(offset) output offset current dark conditions; t amb = 0 to 70 c pin rfp 13 - 0 m a pin rfn - 14 - 0 m a symbol parameter conditions min. typ. max. unit
2003 jun 26 11 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 i n(o) spot noise differential output current i o = 2 ma; f o =50mhz reading dvd-rom - 360 - pa/ ? hz reading cd-rom - 1250 - pa/ ? hz reading dvd+rw - 515 - pa/ ? hz reading cd-rw - 1400 - pa/ ? hz satellite segment outputs; pins e, f, g and h b - 3db channel e, f, g and h rf bandwidth i o =1ma writing dvd+r 65 85 105 mhz writing cd-r 70 90 110 mhz writing dvd+rw 90 115 140 mhz writing cd-rw 60 75 90 mhz reading dvd-rom 85 110 135 mhz reading cd-rom 60 75 90 mhz reading dvd+rw 80 100 120 mhz reading cd-rw 40 50 60 mhz m sens channel e, f, g and h matching sensitivity note 5 0 - +5 % v o output voltage range 1 - v dd2 - 1v i o output current excluding writing cd-r 0 0.75 6.5 ma i o(offset) output offset current dark conditions; t amb = 0 to 70 c - 25 -+ 31 m a i o(clip) current clipping level cd-r writing; note 4 5 - 8ma settling time; note 6 t st(max) settling time cd-r write mode (central and satellite channels); i set > 300 m a; accuracy set level within 5%; ratio write to read peak level factor <50 - <22 - ns cd-r write mode (differential channels rfp and rfn); i set >70 m a; accuracy set level within 5%; ratio write to read peak level factor <50 - <22 - ns cd-rw and dvd+rw write modes (all channels); no clip; i set >70 m a; accuracy set level within 5%; ratio write to read peak level factor 2; i o 100 m a; accuracy set level within 5%; ratio write to read peak level factor 20; i o 2003 jun 26 12 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 common mode ripple, all channels cmr common mode ripple i o = 2 ma (peak); f o up to 65 mhz; note 7 - 20 -- db control inputs; pins r/w, h/l and cd/dvd z i(pd) pull-down input impedance - 230 - k w v il low-level input voltage - 0.2 - +1 v v ih high-level input voltage 2.1 - v dd1 + 0.2 v t t(g) gain transition time - 2 -m s sensitivity ; note 8 s dvd+r output current sensitivity for dvd+r writing; l = 655 nm; note 9 i o(cen) - 1.44 - a/w i o(sat) - 4.76 - a/w i o(rfp) , i o(rfn) - 0.54 - a/w s cd-r output current sensitivity for cd-r writing; l = 785 nm; note 10 i o(cen) - 43.2 - a/w i o(sat) - 173 - a/w i o(rfp) , i o(rfn) - 1.08 - a/w s dvd+rw output current sensitivity for dvd+rw writing; l = 655 nm; note 9 i o(cen) - 2.88 - a/w i o(sat) - 11.5 - a/w i o(rfp) , i o(rfn) - 1.08 - a/w reading; l = 655 nm; note 11 i o(cen) - 43.2 - a/w i o(sat) - 173 - a/w i o(rfp) , i o(rfn) - 16.2 - a/w s cd-rw output current sensitivity for cd-rw writing; l = 785 nm; note 9 i o(cen) - 5.67 - a/w i o(sat) - 23.0 - a/w i o(rfp) , i o(rfn) - 2.16 - a/w reading; l = 785 nm; note 11 i o(cen) - 173 - a/w i o(sat) - 691 - a/w i o(rfp) , i o(rfn) - 64.8 - a/w s dvd-rom output current sensitivity for dvd-rom reading; l = 655 nm; note 11 i o(cen) - 21.6 - a/w i o(sat) - 86.4 - a/w i o(rfp) , i o(rfn) - 8.1 - a/w symbol parameter conditions min. typ. max. unit
2003 jun 26 13 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 notes 1. the supplies are connected internally by diodes. differences between the supply voltages should not exceed 0.3 v. 2. estimated average power consumption (typical value): p=v dd (1.4 i o(av) 9+i dd1 +i dd2 ) where i o(av) is the average output current. conditions: v dd =v dd1 =v dd2 and i o < 8 ma. 3. outputs a, b, c, and d: i o = 1 ma output current. definition of matching: where v ref =v ref1 =v ref2 (see fig.5) and i (o)av is the average output current. 4. the clipping function is active in the cd-r write mode for the segment outputs (not for outputs rfp and rfn) and in the read mode for all outputs. in the read mode, the clipping level is increased to 8 ma. 5. outputs e, f, g, and h: i o = 1.5 ma output current. definition of matching: where v ref =v ref1 =v ref2 (see fig.5) and i (o)av is the average output current. m sens = 7% for reading cd-rw, cd-rom, dvd+rw and writing cd-r mode. 6. the settling time includes the recovery time. 7. definition: 8. the sensitivity of the TZA1045 is specified in a/w because it has current outputs. in the application diagram (see fig.5) the resistors of 150 w convert the currents into voltages (v/w). the maximum absolute spread is 10%. 9. writing without clipping. 10. writing with clipping in cd-r mode for all segment outputs (not outputs rfp and rfn). 11. reading with clipping active and switched to a level of typical 8 ma. s cd-rom output current sensitivity for cd-rom reading; l = 785 nm; note 11 i o(cen) - 86.4 - a/w i o(sat) - 346 - a/w i o(rfp) , i o(rfn) - 32.4 - a/w symbol parameter conditions min. typ. max. unit i o(max) i o(min) C i a i b i c i d +++ () 1 4 -- - ----------------------------------------------------- - v ref i o () av C i o(max) i o(min) C i e i f i g i h ++ + () 1 4 -- - ----------------------------------------------------- - v ref i o () av C 20log i rfp i rfn + i rfp i rfn C -----------------------------
2003 jun 26 14 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 application information an application example for the TZA1045 is shown in fig.5. the satellite segment pins are cross-coupled to be suitable for rewritable applications. handbook, full pagewidth TZA1045 mgu618 1 234 5 rfp rfn 67 8 16 150 w e 15 14 13 12 h/l cd/dvd v dd r/w 11 10 9 150 w 150 w 150 w g d a v ref1 v ref2 150 w h 150 w 150 w 75 w 75 w 150 w f b c fig.5 application example.
2003 jun 26 15 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 package outline unit a 2 a 6 h e cd (1) d w (2) el z (1) y w v references outline version european projection issue date iec jedec jeita mm 1.3 1.1 0.37 0.17 a 7 0.25 0.15 b p 0.32 0.20 0.25 0.13 5.3 5.1 2.1 1.9 e (1) 4.5 4.3 0.65 6.7 6.5 0.48 0.18 0.13 0.2 0.1 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.2 mm maximum per side are not included. 2. sensor area 1.1 sot734-1 01-11-09 w m a 2 a 6 a 7 b p d d w h e detail x e z e c l v m a x a 18 16 9 0 2.5 5 mm scale ssop16t: plastic shrink small outline package/transparent; 16 leads (straight); body width 4.4 mm sot734-1 pin 1 index pin 1 index y
2003 jun 26 16 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 270 c depending on solder paste material. the top-surface temperature of the packages should preferably be kept: below 220 c (snpb process) or below 245 c (pb-free process) C for all bga and ssop-t packages C for packages with a thickness 3 2.5 mm C for packages with a thickness < 2.5 mm and a volume 3 350 mm 3 so called thick/large packages. below 235 c (snpb process) or below 260 c (pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm 3 so called small/thin packages. moisture sensitivity precautions, as indicated on packing, must be respected at all times. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2003 jun 26 17 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales office. 2. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 3. these transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 c 10 c measured in the atmosphere of the reflow oven. the package body peak temperature must be kept as low as possible. 4. these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 5. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 6. wave soldering is suitable for lqfp, tqfp and qfp packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 7. wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package (1) soldering method wave reflow (2) bga, lbga, lfbga, sqfp, ssop-t (3) , tfbga, vfbga not suitable suitable dhvqfn, hbcc, hbga, hlqfp, hsqfp, hsop, htqfp, htssop, hvqfn, hvson, sms not suitable (4) suitable plcc (5) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (5)(6) suitable ssop, tssop, vso, vssop not recommended (7) suitable
2003 jun 26 18 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 jun 26 19 philips semiconductors preliminary speci?cation photodiode and ampli?er ic for cd and dvd applications TZA1045 notes
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 753503/03/pp 20 date of release: 2003 jun 26 document order number: 9397 750 11427

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